VLSI TECHNOLOGY ( Syllabus)

 VLSI TECHNOLOGY

Course Code: 6TMVD-201

 Syllabus:

UNIT - I    Overview of Semiconductor Processing: Electronic grade silicon preparation, Crystal growth, Czochralski process, wafer preparation, slicing, Marking, polishing, evaluation. Basic wafer fabrication operations, wafer sort, clean room construction and maintenance.

UNIT - II   Oxidation: Objectives, Silicon dioxide layer uses, Thermal oxidation mechanism and methods, Kinetics of oxidation, Deal Grove model, Oxidation processes, post oxidation evaluation.

UNIT - III Basic Patterning: Overview of Photo-masking process, Ten step process, Basic photoresist chemistry, comparison of positive and negative photoresists, X-ray lithography, Electron beam exposure system.

UNIT - IV Doping: Definition of a junction, Formation of doped region and junction by diffusion, diffusion process steps, deposition, drive-in-oxidation, Ion implantation- concept and system, implant damage, Comparison of diffusion and ion-implantation techniques.

UNIT -V    Deposition: Chemical Vapor Deposition (CVD), CVD Process steps, CVD System types, Low-Pressure CVD (LPCVD), Plasma-enhanced CVD (PECVD), Vapor Phase Epitaxy (VPE), Molecular Beam Epitaxy (MBE), Metalorganic CVD (MOCVD), SOS (Silicon on Sapphire) and SOI (silicon on Insulator). Brief Introduction to Metallization.

Reference Books:

  • VLSI Technology                                    S.M. Sze                  McGraw-Hill, 2nd Ed
  • VLSI Fabrication Principles                    S. K. Gandhi           Wiley
  • Silicon Semiconductor Technology         W. R. Runyan          McGraw-Hill

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